Pad:OKDatasheet > Semiconductor Notitie > Cree Datasheet
Trefwoord: Cree Datasheet, Cree Data Sheet, Cree Datasheets, Cree, Inc
Cree Notitie zoeken, Nieuwe Cree Informatiebladen
Om de specifieke Cree, Incnotitie, zoek okDatasheet deel van het aantal of het onderdeel beschrijving. U wordt gepresenteerd met een lijst van alle overeenkomende delen met Cree notities. Klik op een beursgenoteerde elektronische component voor meer details met inbegrip van alle specs.
Cree officiële website
De laatste Cree Datasheet PDF
| Deel Nee | Toepassing |
|---|---|
| W6NRE0X-0000 | Diameter 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W4TXE0X-0D00 | Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W4NRE0X-0D00 | Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C505-XB290-E1000-A | 11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED |
| C470-XB900-A | 150mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| W6NXD0K-0000 | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W6NXD3J-0000 | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD10120D | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| CSD04060E | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W4NXE4C-LD00 | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD01060A | 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| C525-CB230-E1000 | 0.650W; colorgreen; 3.7V; low current InGaN LED |
| C490-CB290-E1000 | 2.5mW; coloraqua blue; 3.3-3.7V; super bright InGaN LED |
| W4TRD0R-0D00 | Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C527-MB290-E1000 | 7.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
| W4NXE4C-SD00 | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CRF-22010-001 | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
| C405-XB900-A | 250mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| C460-XB290-E1000-A | 15.0mW; colordeep blue; 3.7-4.0V; Xbright InGaN LED |
| W4NRD8C-U000 | Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD20060D | 600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber |
| C460-UB290-E1000 | 5.5mW; colordeep blue; 3.5-3.9V; ultra bright InGaN LED |
| CXXX-MB290-S0100 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| C503-MB290-E1000 | 8.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
| W4NXE8C-SD00 | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C470-XB290-E1000-A | 14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| C470-MB290-E1000 | 10.0mW; colorblue; 3.7-4.0V; mega bright InGaN LED |
| W4NXE8C-LD00 | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
Cree Profiel
Cree, Inc is a market and technology leader in LED chips, power LEDs, LEDs for backlighting, power switching and wireless communications devices.