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| Deel Nee | Toepassing |
|---|---|
| C1321P | Channel photomultiplexer, 1/2 inche, special type for photon counts, dark counts 4 cps. |
| C1311 | Channel photomultiplexer, 1/2 inche, window material MgF2, dark current 8 pA. |
| MH1373 | 1/2 inche CPM module. Input voltage 5V to +5.5V DC. Window material UV glass. Dark current 20000pA @ 5 x 10^7 gain. |
| VTB5051UVJ | Process photodiode. Isc = 130 microA, Voc = 490 mV at H = 100 fc, 2850 K. |
| GP-488 | Mini-triggered spark gap. E-E operating range 2kV(min), 4kV(max), SBV 4.5kV(min), VT 2kV(min), peak pulse current 10kA. |
| MD1363 | Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 120pA/6mV @ 1 x 10^6 gain & 1V/20nA. |
| MD1943 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 30pA/1.5mV @ 1 x 10^6 gain & 1V/20nA. |
| MH1973 | 3/4 inche CPM module. Input voltage 5V to +5.5V DC. Window material UV glass. Dark current 50000pA @ 5 x 10^7 gain. |
| MH1983P | 3/4 inche CPM module. P-version. Input voltage 5V to +5.5V DC. Window material UV glass. Dark counts per second 25 cps(typ.). |
| MD1982 | Ultra high sensivity gateable photomultiplier DC-module. 3/4 inche DC photosensor module. Window material quartz. Dark current/offset voltage 10pA/500microV @ 1 x 10^6 gain & 1V/20nA. |
| VT50N1 | Photoconductive cell |
| MP942 | Ultra high sensitivity gateable photon counting module. Window material quartz, dark counts 10 cps(typ.) |
| GP-70 | Triggered spark gap. O-A range (min/max) 12-36kV. |
| RL1024PAQ-712 | Linear photodiode array imager. Window fused silica. 1024 active pixels. |
| GP-81B | Triggered spark gap. O-A range (min/max) 40-100kV. |
| C1343P | Channel photomultiplexer, 1/2 inche, special type for photon counts, dark counts 40 cps. |
| VTS2086 | Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
| OGP-49 | Overvoltage spark gap. Static breakdown voltage range (min-max) 2-25 kV. |
| VT935G | Photoconductive cell. Group A, B, C. |
| HY-3192 | Thyratron. Peak anode voltage epy 32 kV, peak anode current ib 1000 a, average anode current lb 2.2 Adc, RMS anode current lb 47.5 Aac. Seated height x tube width 3.75 x 3.25 inches. |
| PB-23 | Overvoltage spark gap. Static breakdown voltage range (min-max) 0.5-5 kV. |
| C30807 | N-type silicon PIN photodetector |
| LS-5101 | Thyratron. Peak anode voltage epy 40 kV, peak anode current ib 20000 a, average anode current lb 4 Adc, RMS anode current lb 90 Aac. Seated height x tube width 6.75 x 4.5 inches. |
| VTP4085 | Process photodiodes |
| VTL11D3 | Optoswitch. Slotted switch with P.C.P. mount leads. LED emitter, phototransistor detector. |
| LD3541PGK-011 | Low-cost digital linescan camera. CameraLink. Number of pixels 512. 40 MHz. |
| VTL5C4 | Low cost axial VACTROL |
| OGP-75 | Overvoltage spark gap. Static breakdown voltage range (min-max) 10-30 kV. |
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PerkinElmer Optoelectronics Develops, manufactures, and markets optoelectronic devices, such as sensors, photodiode arrays, multiplexers, and imaging products for the biomedical