F1076 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1076 Soortgelijke

F1070
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1072
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1074
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077
- 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1076 Datasheet en spec

Fabrikant : Polyfet RF

Verpakking :

Pins : 4

Temperatuur : Min -65 °C | Max 150 °C

Grootte : 41 KB

Toepassing : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor