2SK1961 spec: N-channel junction silicon FET, high-frequency low-noise amp application

2SK1961 Soortgelijke

2SK1052
- N-channel MOS silicon FET, very high-speed switching application
2SK1065
- N-channel junction silicon FET, high-frequency general-purpose amp application
2SK1066
- N-channel junction silicon FET, high-frequency general-purpose amp application
2SK1067
- "N-channel MOS silicon FET, FM tuner, VHF-band amp application"
2SK1068
- N-channel junction silicon FET, impedance conversion application
2SK1069
- N-channel junction silicon FET, low-frequency general-purpose amp application
2SK1332
- N-channel junction silicon FET, low-frequency general-purpose amp application
2SK1413
- N-channel MOS silicon FET, high-voltage, high-speed switching application

2SK1961 Datasheet en spec

Fabrikant : SANYO

Verpakking : 2019A

Pins : 3

Temperatuur : Min 0 °C | Max 0 °C

Grootte : 140 KB

Toepassing : N-channel junction silicon FET, high-frequency low-noise amp application