1N5367B Soortgelijke

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    • 11 V, 5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5350B
    • 13 V, 1 A, 5 W, glass passivated junction silicon zener diode
  • 1N5352B
    • 15 V, 1 A, 5 W, glass passivated junction silicon zener diode
  • 1N5353B
    • 16 V, 1 A, 5 W, glass passivated junction silicon zener diode
  • 1N5354B
    • 17 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5355B
    • 18 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5356B
    • 19 V, 0.5 A, 5 W, glass passivated junction silicon zener diode
  • 1N5357B
    • 20 V, 0.5 A, 5 W, glass passivated junction silicon zener diode

1N5367B Datasheet en spec

Fabrikant : Transys Electronics 

Verpakking : DO-201AE 

Pins : 2 

Temperatuur : Min -55 °C | Max 150 °C

Grootte : 293 KB

Toepassing : 43 V, 0.5 A, 5 W, glass passivated junction silicon zener diode 

1N5367B PDF formaat downloaden