Pad:OKDatasheet > Semiconductor Notitie > Cree Datasheet > W6PXD3O-0000
W6PXD3O-0000 spec: Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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Toepassing : Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition