HMBT5551 spec: Emitter to base voltage6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage

HMBT5551 Soortgelijke

HMBT1015
- 5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
HMBT1015
- 5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
HMBT1815
- 5V 150mA NPN epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
HMBT2222A
- 6V 600mA NPN epitaxial planar transistor for general purpose amplifier and high-speed switching, medium-power switching applications
HMBT2369
- 40V 500mA NPN epitaxial planar transistor for general purpose switching and amplifier applications
HMBT2484
- 6V 50mA NPN epitaxial planar transistor
HMBT2907A
- 5V 600mA PNP epitaxial planar transistor for general purpose amplifier and high-speed switching, medium power swithcing applications
HMBT3904
- 6V 200mA NPN epitaxial planar transistor for general purpose switching amplifier applications

HMBT5551 Datasheet en spec

Verpakking : SOT-23

Pins : 3

Temperatuur : Min 0 °C | Max 0 °C

Grootte : 34 KB

Toepassing : Emitter to base voltage6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage