Pad:OKDatasheet > Semiconductor Notitie > IR Datasheet > IRC630
IRC630 spec: "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
Pad:OKDatasheet > Semiconductor Notitie > IR Datasheet > IRC630
IRC630 spec: "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
Fabrikant : IR
Verpakking : TO-220
Pins : 5
Temperatuur : Min -55 °C | Max 150 °C
Grootte : 251 KB
Toepassing : "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"