Pad:OKDatasheet > Semiconductor Notitie > IR Datasheet > IRFR4105TRR
IRFR4105TRR spec: N-channel power MOSFET for fast switching applications, 55V, 27A
IRFR4105TRR Soortgelijke
- IRFR024N
- Power MOSFET, 55V, 17A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFR13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFR13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFR214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFR4105TRR Datasheet en spec
Fabrikant : IR
Verpakking : D-PAK
Pins : 3
Temperatuur : Min -55 °C | Max 175 °C
Grootte : 158 KB
Toepassing : N-channel power MOSFET for fast switching applications, 55V, 27A
IRFR4105TRR PDF formaat downloaden