Pad:OKDatasheet > Semiconductor Notitie > IR Datasheet > IRFU9N20D
IRFU9N20D spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
IRFU9N20D Soortgelijke
- IRFU024N
- Power MOSFET, 55V, 17A
- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFU13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFU214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFU9N20D Datasheet en spec
Fabrikant : IR
Verpakking : I-PAK
Pins : 3
Temperatuur : Min -55 °C | Max 175 °C
Grootte : 138 KB
Toepassing : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
IRFU9N20D PDF formaat downloaden