Pad:OKDatasheet > Semiconductor Notitie > IR Datasheet > IRG4PC30KD
IRG4PC30KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Pad:OKDatasheet > Semiconductor Notitie > IR Datasheet > IRG4PC30KD
IRG4PC30KD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Fabrikant : IR
Verpakking : TO-247AC
Pins : 3
Temperatuur : Min -55 °C | Max 150 °C
Grootte : 195 KB
Toepassing : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A