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IXBT42N170 spec: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 Soortgelijke
- IXBT16N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
- IXBT40N140
- 1400V high voltage BIMOSFET
- IXBT40N160
- 1600V high voltage BIMOSFET
- IXBT40N160
- 1600V high voltage BIMOSFET
- IXBT40N160
- 1600V high voltage BIMOSFET monolithic bipolar MOS transistor
- IXBT42N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 Datasheet en spec
Fabrikant : IXYS
Verpakking : TO-268
Pins : 3
Temperatuur : Min -55 °C | Max 150 °C
Grootte : 54 KB
Toepassing : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 PDF formaat downloaden