Pad:okDatasheet > Semiconductor Notitie > JGD Datasheet > JGD-21

2A UF4003 P6KE33 1N4126 P4KE16 SMBJ60C RC2005 FR103L BZX84C7V5 1N983D 1N5943C 1N5544D 3EZ110D10 1N4750A 1N5933 KBP208G 1N5947B SMAJ64CA 3EZ47D 1N4749D RL205 1N5914B 3EZ4.3D5 1N5932B 1N4744 HER108G SMAJ6.0 SMAJ160

JGD Informatiebladen Catalog-21

Deel NeeFabrikantToepassing
1N4622D JGD500mW low noise silicon zener diode. Nominal zener voltage 3.9V. 1% tolerance.
1N4760 JGD1W zener diode. Nominal zener voltage 68V. 10% tolerance.
SMBJ12A JGDSurface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA.
UF4003 JGDUltra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A.
P6KE33 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V.
1N4126 JGD500mW low noise silicon zener diode. Nominal zener voltage 51V.
P4KE16 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V.
SMBJ60C JGDSurface mount transient voltage suppressor. Breakdown voltage 66.7 V (min), 81.5 V (max). Test current 1.0 mA. Bidirectional.
RC2005 JGDSingle phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2 A.
FR103L JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V.
BZX84C7V5 JGD350mW zener diode, 7.5V
1N983D JGD0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-1% tolerance.
1N5943C JGD1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-2% tolerance.
1N5544D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-1% tolerance.
3EZ110D10 JGD3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-10% tolerance.
1N4750A JGD1W zener diode. Zener voltage 27V.
1N5933 JGD1.5 W, silicon zener diode. Zener voltage 22V. Test current 17 mA. +-20% tolerance.
KBP208G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
1N5947B JGD1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-5% tolerance.
SMAJ64CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. Bidirectional.
3EZ47D JGD3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-20% tolerance.
1N4749D JGD1W zener diode. Nominal zener voltage 24V. 1% tolerance.
RL205 JGDSilicon rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 2.0 A.
1N5914B JGD1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-5% tolerance.
3EZ4.3D5 JGD3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-5% tolerance.
1N5932B JGD1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-5% tolerance.
1N4744 JGD1W zener diode. Nominal zener voltage 15V. 10% tolerance.
HER108G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V.
SMAJ6.0 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V.
SMAJ160 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 >>