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ZMM5253D 1N991B MMBD914B TMPD7000 SMAJ43 ZMM5232A 1N5931A SMAJ33A HER604 1N5951B 6A10 FR154 1N5530B 1N753C SMAJ6.0A SMAJ18 SMBJ26C ZMM5223D KBPC600G 1N5942 P6KE68CA P4KE47CA P4KE9.1C ZMM5261A 1EZ150D5 IN5404 1N971C

JGD Informatiebladen Catalog-4

Deel NeeFabrikantToepassing
FR107L JGD"1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V."
RC204 JGDSingle phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 2 A.
1N4741D JGD1W zener diode. Nominal zener voltage 11V. 1% tolerance.
ZMM5253D JGDSurface mount zener diode. Nominal zener voltage 25 V. Test current 5.0 mA. +-20% tolerance.
1N991B JGD"0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-5% tolerance."
MMBD914B JGDSurface mount switching diode. Max forward voltage 1.00V at 100mA.
TMPD7000 JGDSurface mount switching diode. Max forward voltage 0.75V at 100mA.
SMAJ43 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V.
ZMM5232A JGDSurface mount zener diode. Nominal zener voltage 5.6 V. Test current 20 mA. +-3% tolerance.
1N5931A JGD"1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-10% tolerance."
SMAJ33A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V.
HER604 JGD6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V.
1N5951B JGD1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-5% tolerance.
6A10 JGD6.0 A silicon rectifier. Max recurrent peak reverse voltage 1000 V.
FR154 JGD1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 400V.
1N5530B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance.
1N753C JGD500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-2% tolerance.
SMAJ6.0A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V.
SMAJ18 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V.
SMBJ26C JGDSurface mount transient voltage suppressor. Breakdown voltage 28.9 V (min), 35.3 V (max). Test current 1.0 mA. Bidirectional.
ZMM5223D JGDSurface mount zener diode. Nominal zener voltage 2.7 V. Test current 20 mA. +-20% tolerance.
KBPC600G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.
1N5942 JGD1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance.
P6KE68CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional.
P4KE47CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional.
P4KE9.1C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. Bidirectional.
ZMM5261A JGDSurface mount zener diode. Nominal zener voltage 47 V. Test current 2.7 mA. +-3% tolerance.
1EZ150D5 JGD1 watt silicon zener diode. Nominal zener voltage 150V at 1.7mA.
IN5404 JGD3.0 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.
1N971C JGD0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-2% tolerance.

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