BC261 Soortgelijke

  • BC261
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC262
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC263
    • 360mW PNP high gain low noise silicon planar epitaxial transistor

BC261 Datasheet en spec

Fabrikant : Micro Electronics 

Verpakking : TO-18 

Pins : 3 

Temperatuur : Min -65 °C | Max 200 °C

Grootte : 103 KB

Toepassing : 360mW PNP high gain low noise silicon planar epitaxial transistor 

BC261 PDF formaat downloaden