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MTB3N60E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N60E Soortgelijke
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N60E Datasheet en spec
Fabrikant : Motorola
Verpakking : DPAK
Pins : 4
Temperatuur : Min -55 °C | Max 150 °C
Grootte : 81 KB
Toepassing : TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N60E PDF formaat downloaden