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MTB55N06Z spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z Soortgelijke
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z Datasheet en spec
Fabrikant : Motorola
Verpakking : DPAK
Pins : 4
Temperatuur : Min -55 °C | Max 150 °C
Grootte : 160 KB
Toepassing : TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z PDF formaat downloaden