NTE3312 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

NTE3312 Soortgelijke

NTE30
- Silicon complementary PNP transistor. High power, high current switch.
NTE300
- Silicon complementary NPN transistor. Audio power amplifier.
NTE3000
- Light emitting diode miniature, clear red.
NTE30001
- Infrared emitting diode bi-directional.
NTE3001
- Light emitting diode miniature, diffused red.
NTE3007
- Discrete LED indicator. Diffused red, gallium arsenide phosphide red.
NTE3008
- Discrete LED indicator. Diffused bright red, gallium phosphide on gallium phosphide red.
NTE3009
- Discrete LED indicator. Diffused orange, gallium arsenide phosphide on gallium phosphide orange.

NTE3312 Datasheet en spec

Verpakking :

Pins : 3

Temperatuur : Min 0 °C | Max 150 °C

Grootte : 19 KB

Toepassing : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.