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NTE6030 spec: Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A.
NTE6030 Soortgelijke
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6030 Datasheet en spec
Fabrikant : NTE Electronic
Verpakking :
Pins : 2
Temperatuur : Min -65 °C | Max 175 °C
Grootte : 26 KB
Toepassing : Industrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 300V. Max average forward current 60A.
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