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NTE6362 spec: Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V.
NTE6362 Soortgelijke
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6362 Datasheet en spec
Fabrikant : NTE Electronic
Verpakking :
Pins : 2
Temperatuur : Min -40 °C | Max 180 °C
Grootte : 27 KB
Toepassing : Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V.
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