MGP4N60ED spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Soortgelijke

MGP4N60E
- Insulated Gate Bipolar Transistor N-Channel
MGP4N60ED
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel

MGP4N60ED Datasheet en spec

Verpakking : TO-220

Pins : 3

Temperatuur : Min 0 °C | Max 0 °C

Grootte : 160 KB

Toepassing : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel