Pad:OKDatasheet > Semiconductor Notitie > ON Semiconductor Datasheet > MJE18004D2
MJE18004D2 spec: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Pad:OKDatasheet > Semiconductor Notitie > ON Semiconductor Datasheet > MJE18004D2
MJE18004D2 spec: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Fabrikant : ON Semiconductor
Verpakking : TO-220
Pins : 3
Temperatuur : Min 0 °C | Max 0 °C
Grootte : 512 KB
Toepassing : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network