Pad:OKDatasheet > Semiconductor Notitie > Philips Datasheet > PHB125N06LT
PHB125N06LT spec: TrenchMOS transistor Logic level FET
PHB125N06LT Soortgelijke
- PHB100N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB10N40
- PowerMOS transistor.
- PHB10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHB112N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- TrenchMOS transistor. Logic level FET.
PHB125N06LT Datasheet en spec
Fabrikant : Philips
Verpakking : SOT404
Pins : 0
Temperatuur : Min 0 °C | Max 0 °C
Grootte : 78 KB
Toepassing : TrenchMOS transistor Logic level FET
PHB125N06LT PDF formaat downloaden