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PHX2N50E spec: PowerMOS transistor. Avalanche energy rated.
PHX2N50E Soortgelijke
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- 100 V, N-channel trenchMOS transistor
- PHX2N40E
- 400 V, power MOS transistor isolated version of PHP4N40E
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- PowerMOS transistor. Avalanche energy rated.
PHX2N50E Datasheet en spec
Fabrikant : Philips
Verpakking : SOT186A
Pins : 3
Temperatuur : Min -55 °C | Max 150 °C
Grootte : 85 KB
Toepassing : PowerMOS transistor. Avalanche energy rated.
PHX2N50E PDF formaat downloaden