F1001 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001 Soortgelijke

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001 Datasheet en spec

Fabrikant : Polyfet RF

Verpakking :

Pins : 4

Temperatuur : Min -65 °C | Max 150 °C

Grootte : 40 KB

Toepassing : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor