F1014 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1014 Soortgelijke

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1014 Datasheet en spec

Fabrikant : Polyfet RF

Verpakking :

Pins : 2

Temperatuur : Min -65 °C | Max 150 °C

Grootte : 41 KB

Toepassing : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor