F2202 spec: 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2202 Soortgelijke

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2202 Datasheet en spec

Fabrikant : Polyfet RF

Verpakking :

Pins : 2

Temperatuur : Min -65 °C | Max 150 °C

Grootte : 40 KB

Toepassing : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor