2SC2909 spec: NPN epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application

2SC2909 Soortgelijke

2SC2078
- NPN epitaxial planar silicon transistor, 27 MHz RF power amp application
2SC2314
- NPN epitaxial planar silicon transistor, 27 MHz CB transceiver driver application
2SC2344
- NPN epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application
2SC2362
- "NPN epitaxial planar silicon transistor, high voltag, low-noise amp application"
2SC2814
- NPN epitaxial planar silicon transistor, high-frequency general-purpose amp application
2SC2814
- NPN transistor for high-frequency general-purpose amplifier applications
2SC2814
- NPN epitaxial planar silicon transistor, high-frequency general-purpose amp application
2SC2839
- NPN transistor for HF amplifier applications

2SC2909 Datasheet en spec

Fabrikant : SANYO

Verpakking : 2003A

Pins : 3

Temperatuur : Min 0 °C | Max 0 °C

Grootte : 118 KB

Toepassing : NPN epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application