2SC3070 spec: NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application

2SC3070 Soortgelijke

2SC3000
- NPN epitaxial planar silicon transistor, HF amp application
2SC3038
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3039
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3042
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3068
- NPN transistor for low-frequency general-purpose amplifier applications
2SC3069
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3070
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3071
- NPN transistor, high hFE, low-frequency general-purpose amplifier applications

2SC3070 Datasheet en spec

Fabrikant : SANYO

Verpakking : 2006A

Pins : 3

Temperatuur : Min 0 °C | Max 0 °C

Grootte : 87 KB

Toepassing : NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application