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MJD112 spec: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 Soortgelijke
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD112 Datasheet en spec
Fabrikant : ST Microelectronics
Verpakking :
Pins : 0
Temperatuur : Min 0 °C | Max 0 °C
Grootte : 92 KB
Toepassing : COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 PDF formaat downloaden