STH6N100 Soortgelijke

  • STH60N10
    • Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
  • STH60N10FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6NA80FI
    • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6N100 Datasheet en spec

Fabrikant : ST Microelectronics 

Verpakking :  

Pins : 0 

Temperatuur : Min 0 °C | Max 0 °C

Grootte : 222 KB

Toepassing : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 

STH6N100 PDF formaat downloaden