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75CA KBPC808G 1N5928C 1N989B 1N5546C SMAJ7.0C 3EZ140D10 3EZ62D1 1N5539 1N5535D SMAJ10 SF14 SMAJ36 SF15LG P4KE18A 1N4123 1N754D 1N4737D 1N4621 1N990D SMBJ5.0A P6KE6.8CA ZMM5222A SMBJ5940B SMAJ58 SMBJ40C 3EZ18D1 1N4614C

JGD Informatiebladen Catalog-32

Deel NeeFabrikantToepassing
SMAJ12A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V.
1N4115C JGD500mW low noise silicon zener diode. Nominal zener voltage 22V. 2% tolerance.
SMBJ75CA JGDSurface mount transient voltage suppressor. Breakdown voltage 83.3 V (min), 92.1 V (max). Test current 1.0 mA. Bidirectional.
KBPC808G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
1N5928C JGD1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-2% tolerance.
1N989B JGD0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-5% tolerance.
1N5546C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-2% tolerance.
SMAJ7.0C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional.
3EZ140D10 JGD3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-10% tolerance.
3EZ62D1 JGD3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-1% tolerance.
1N5539 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-20% tolerance.
1N5535D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-1% tolerance.
SMAJ10 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V.
SF14 JGDSuper fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A.
SMAJ36 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V.
SF15LG JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A.
P4KE18A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V.
1N4123 JGD500mW low noise silicon zener diode. Nominal zener voltage 39V.
1N754D JGD500mW, silicon zener diode. Zener voltage 6.8 V. Test current 20 mA. +-1% tolerance.
1N4737D JGD1W zener diode. Nominal zener voltage 7.5V. 1% tolerance.
1N4621 JGD500mW low noise silicon zener diode. Nominal zener voltage 3.6V.
1N990D JGD0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-1% tolerance.
SMBJ5.0A JGDSurface mount transient voltage suppressor. Breakdown voltage 6.40 V (min), 7.00 V (max). Test current 10.0 mA.
P6KE6.8CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. Bidirectional.
ZMM5222A JGDSurface mount zener diode. Nominal zener voltage 2.5 V. Test current 20 mA. +-3% tolerance.
SMBJ5940B JGD1.5W silicon surface mount zener diode. Zener voltage 43 V. Test current 8.7 mA. +-5% tolerance.
SMAJ58 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V.
SMBJ40C JGDSurface mount transient voltage suppressor. Breakdown voltage 44.4 V (min), 54.3 V (max). Test current 1.0 mA. Bidirectional.
3EZ18D1 JGD3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-1% tolerance.
1N4614C JGD500mW low noise silicon zener diode. Nominal zener voltage 1.8V. 2% tolerance.

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