Pad:okDatasheet > Semiconductor Notitie > JGD Datasheet > JGD-49

J5943D 3EZ82D10 1N4740A KBP202 SMAJ17C P4KE82 MMBD1203 P6KE15A HER501 P6KE16A 1N4116C 3EZ91D5 KBU1008G 1N5523 P6KE16C 1N4129D MM4148 3EZ28D2 3EZ12D1 ZMM5226D 1N972 P4KE400CA BY298 RB157G 3EZ110D SMBJ5916B SMBJ9.0 SMBJ5925

JGD Informatiebladen Catalog-49

Deel NeeFabrikantToepassing
1N5949 JGD1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-20% tolerance.
BZX84C5V6 JGD350mW zener diode, 5.6V
SMBJ5943D JGD1.5W silicon surface mount zener diode. Zener voltage 56 V. Test current 6.7 mA. +-1% tolerance.
3EZ82D10 JGD3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-10% tolerance.
1N4740A JGD1W zener diode. Zener voltage 10V.
KBP202 JGDSingle-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V.
SMAJ17C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional.
P4KE82 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V.
MMBD1203 JGDSurface mount switching diode. Max forward voltage 1.00V at 200mA.
P6KE15A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 15 V.
HER501 JGD5.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 50V.
P6KE16A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V.
1N4116C JGD500mW low noise silicon zener diode. Nominal zener voltage 24V. 2% tolerance.
3EZ91D5 JGD3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-5% tolerance.
KBU1008G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
1N5523 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-20% tolerance.
P6KE16C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. Bidirectional.
1N4129D JGD500mW low noise silicon zener diode. Nominal zener voltage 62V. 1% tolerance.
MM4148 JGDSurface mount switching diode. Peak reverse voltage 100V. Rectified current 150mA.
3EZ28D2 JGD3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-2% tolerance.
3EZ12D1 JGD3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-1% tolerance.
ZMM5226D JGDSurface mount zener diode. Nominal zener voltage 3.3 V. Test current 20 mA. +-20% tolerance.
1N972 JGD0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. +-20% tolerance.
P4KE400CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. Bidirectional.
BY298 JGD2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400V.
RB157G JGDMiniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V.
3EZ110D JGD3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-20% tolerance.
SMBJ5916B JGD1.5W silicon surface mount zener diode. Zener voltage 4.3 V. Test current 87.2 mA. +-5% tolerance.
SMBJ9.0 JGDSurface mount transient voltage suppressor. Breakdown voltage 10.0 V (min), 12.2 V (max). Test current 1.0 mA.
SMBJ5925 JGD1.5W silicon surface mount zener diode. Zener voltage 10 V. Test current 37.5 mA. +-20% tolerance.

<< 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 >>