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51D 3EZ91D2 3EZ5.1D5 SMBJ5927 SMBJ28C MMBD1705 SR305 ZMM55-B22 SR508 1N5917D 3EZ4.7D4 P4KE300A 1N5940A KBU1008 P6KE16 SMBJ5922C 1N984D SMAJ90A 1N5530A ZMM55-D4V3 HA12 SMAJ10C 1N5948A ZMM55-D47 SMBJ12 P6KE350CA KBPC804 1N966A

JGD Informatiebladen Catalog-39

Deel NeeFabrikantToepassing
KBP200G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.
1N5537A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-10% tolerance.
1N4751D JGD1W zener diode. Nominal zener voltage 30V. 1% tolerance.
3EZ91D2 JGD3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-2% tolerance.
3EZ5.1D5 JGD3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-5% tolerance.
SMBJ5927 JGD1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-20% tolerance.
SMBJ28C JGDSurface mount transient voltage suppressor. Breakdown voltage 31.1 V (min), 38.0 V (max). Test current 1.0 mA. Bidirectional.
MMBD1705 JGDSurface mount switching diode.
SR305 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 3.0 A.
ZMM55-B22 JGDSurface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-2% tolerance.
SR508 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 5.0 A.
1N5917D JGD1.5 W, silicon zener diode. Zener voltage 4.7V. Test current 79.8 mA. +-1% tolerance.
3EZ4.7D4 JGD3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-4% tolerance.
P4KE300A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V.
1N5940A JGD1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-10% tolerance.
KBU1008 JGDSingle phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
P6KE16 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V.
SMBJ5922C JGD1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-2% tolerance.
1N984D JGD0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-1% tolerance.
SMAJ90A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V.
1N5530A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance.
ZMM55-D4V3 JGDSurface mount zener diode, 500mW. Nominal zener voltage 4.0-4.6 V. Test current 5 mA. +-20% tolerance.
HA12 JGD1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 100V.
SMAJ10C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. Bidirectional.
1N5948A JGD1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-10% tolerance.
ZMM55-D47 JGDSurface mount zener diode, 500mW. Nominal zener voltage 44-50 V. Test current 2.5 mA. +-20% tolerance.
SMBJ12 JGDSurface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 16.3 V (max). Test current 1.0 mA.
P6KE350CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional.
KBPC804 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V.
1N966A JGD0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-10% tolerance.

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